diffusion length
英 [dɪˈfjuːʒən leŋθ]
美 [dɪˈfjuʒən leŋθ]
扩散长度
双语例句
- Measuring p-n Junction Minority Carrier Diffusion Length by Microwave Photoconductivity Spectrum Instrument
用微波光电导谱仪测量p&n结少子扩散长度 - Numerical results indicate how the various parameters such as bulk resistivity and carrier diffusion length in the active region affect the profiles.
以数值结果揭示外延层的体电阻率及厚度、活性区载流子的扩散长度、模增益和丝区宽度等参量对上述各种分布的影响。 - Ambipolar Diffusion Length in Semi insulating GaAs
半绝缘GaAs中的双极扩散长度 - The influences of surface and interface recombination velocities, Al composition in window layer, surface layer eletric field, thickness and diffusion length as well as doping level of each layer on solae cell performances are also studied.
研究了表面、界面复合速度、窗口层组分、表面层漂移场、各层的厚度、扩散长度及掺杂浓度等对电池特性的影响。 - By using computer to solve numerically the basic equations of semiconductor, the effect of injection level on the measured minority carrier diffusion length is simulated.
通过计算机数值求解半导体的基本方程，模拟了表面光伏（SPV）法测量N型硅少子扩散长度时注入水平对测量值的影响。 - From the obtained data, it may be possible to extract the information of the p-n junction such as the diffusion length, junction depth, array uniformity, the zero bias dynamic resistance junction area product ( R0A) and other device parameters.
利用得到的数据可以推算出p-n结的扩散长度、结深和探测器的品质因子（R0A）及均匀性等许多参数。 - Finally, the effect of wind velocity, leakage rate and atmospheric condition acted on the total diffusion length and diffusion length in explosion concentration range has been discussed.
分析了风速、泄放速率和大气条件对LNG扩散距离和爆炸上下限浓度扩散范围的影响。 - Determination of Composition and Minority Carrier Diffusion Length for n-AI_xGa_ ( 1-x) As/ n-GaAs by Surface Photovoltage Method
表面光电压法测定AlxGa（1-x）As的组分和少子扩散长度 - In order to prove the reliability of our experimental results, we extract the bulk lifetime and the effective diffusion length of the three samples.
为验证实验结果的可靠性，采用了提取样品少数载流子的体寿命和计算其有效扩散长度两种方法。 - The influences of p-n junction depth ( thickness of p-GaAs layer), velocity of surface recombination and diffusion length of separate layers on behavious of solar cells are also discussed.
本文还讨论了窗口层厚度、Al组分、p-n结结深、表面复合速度和扩散长度对电池性能的影响。 - Measuring model of absorption coefficient of a-si: h and its effect on diffusion length measurement of minority carriers
氢化非晶硅光吸收系数的计量模式对少子扩散长度测量的影响 - Based on intrinsic absorption and transportation in the extended states, the theory of measuring the minority-carrier diffusion length in a-Si: H films with PIN structure by surface photovoltage method is derived.
基于本征吸收、扩展态输运观点，对表面光电压法（SPV）测量a-Si：HPIN结构Ⅰ层少子扩散长度作了理论推导。 - The curve simulation results showed that foreign GaAs photocathodes have low interface recombination velocity, and surface escape probability and electron diffusion length have been improving from standard Gen III to Gen IV, which led to increase of sensitivity the GaAs photocathodes.
曲线拟合结果表明国外GaAs光电阴极的后界面复合速率较低，表面逸出几率和电子扩散长度从标准三代到四代不断提高，这些性能的改善导致了GaAs光电阴极灵敏度的提高。 - A calculating method of non-equilibrium minority carrier diffusion length in the polycrystalline silicon
多晶硅非平衡少数载流子扩散长度的理论计算 - A method for the extraction of diffusion length and surface recombination velocity of gap from EBIC line scan
EBIC测定GaP的少子扩散长度和表面复合速度 - The authors improved the routine steady-state surface photovoltage method to measure minority carrier diffusion length in both sides polished silicon wafers.
本文改进了常规表面光电压测试少子扩散长度法，采用环形下电极消除了薄样品背面光电压信号对测量结果的影响； - Study on Surface Recombination Velocity and Diffusion Length in Semiconductors by Microwave Photoconductivity Spectrum
用微波光电导谱研究半导体薄片的少子扩散长度和表面复合速度 - The results show that in order to get large photo current, ( 1) window layer should be thin and its diffusion length should be three times larger than its thickness;
结果表明，要得到大的光生电流，窗口层应很薄（WP~+<0.1μ），其扩散长度应大于3倍层厚； - The impact of the effective resist diffusion length to the exposure latitude and MEF ( mask error factor) for the 0.13 μ m photolithography and beyond is presented.
展示了在0.13μm及以下工艺中等效扩散对能量裕度和掩模版误差因子的影响的研究结果。 - Using the metal-semiconductor contact model, the calculation formulas are derived. The diffusion length of minority carrier, interface recombination speed and heterojunction barrier width are calculated.
采用类金属半导体接触模型，推导出有关计算公式，计算得出其介面复合速度和异质结势垒宽度等参数。 - The measurement of minority carrier diffusion length in N layer of n/ p epitaxial silicon wafer
N/P硅外延片的少子扩散长度测量 - In this paper, the effect of the measuring model of absoption coefficient of a-Si: H on the diffusion length measurement of minority carriers with SPV method was reported.
报道了a&Si：H的光吸收系数计量模式对少子扩散长度SPV法测量结果的影响。 - Thus we calculated the non-equilibrium minority carrier diffusion length in the polycrystalline silicon by using the Kronig-Penney's method.
由此，用Kronig-Penney方法计算了多晶硅非平衡少数载流子扩散长度。 - The diffusion length of minority carriers in n-type silicon measured with a surface barrier detector
用面垒探测器测定n型硅中少数载流子的扩散长度 - Taking account of carrier lifetime, carrier mobility, carrier diffusion length and its on stage voltage drop, then the optimization design of doping concentration and the width of n base region required in different withstand voltage can be getted.
同时对器件的N基区设计则综合考虑了耐压、载流子寿命、迁移率、载流子的扩散长度和通态压降等，得到了RSD在不同耐压需求下的掺杂浓度和主要阻断区域的优化设计。 - However, with the increase of film thickness, the current density shows a continuous increase. This phenomenon indicates that the electron diffusion length is improved due to the formation of microsphere divided into nanowire network during screen printing.
但是，电流随着薄膜厚度的增加而增加，这个现象说明由于纳米线网格的形成改善了电子扩散系数。 - In this paper, for the noise interference in time-domain diffusion length, the second improved algorithm combines with de-noising method of limiting to achieve the purpose of avoiding noise in the further.
本文的改进算法二主要针对时域弥散长度内的噪声干扰问题，结合限幅去噪的方法，进一步实现了时域去噪声的目的。 - The effects of minority carrier lifetime, diffusion length and surface combination velocity on the conversion efficiency of solar cell are studied by using tow-dimensional simulation software of solar cell, and indicated improved process mehtods.
本工作首先利用太阳电池二维模拟软件，研究了少子寿命、扩散长度、表面复合速率等特性参数对太阳电池转换效率的影响，并指出了改进工艺的措施。 - According to the formula, influences of GaN emission layer absorption coefficient μ hv, electron surface escape probability P, electron diffusion length LD, GaN emission layer thickness Te, and the recombination rate Sv of the back interface on quantum efficiency are analyzed.
根据公式，分析了GaN发射层吸收系数αhv、电子表面逸出几率P、电子扩散长度LD、GaN发射层厚度Te以及后界面复合速率Sv对量子效率的影响。 - The emulational results show that the effect of the silicon substrates thickness on the output performance of n+ pp+ solar cells depends on the diffusion length of minority carrier in substrates.
仿真结果表明，硅衬底厚度对n+pp+电池输出特性的影响与衬底少子的扩散长度相关。